Product Datasheet Search Results:

TSM3900DCX6RF.pdf6 Pages, 330 KB, Original
TSM3900DCX6RF
Taiwan Semiconductor Co., Ltd.
2 A, 20 V, 0.055 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Taiwansemi.com/TSM3900DCX6RF
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1528 Bytes - 14:29:19, 26 November 2024

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