Datasheet.Directory

{"Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"1.1 V","Qg - Gate Charge":"0.27 nC","Package / Case":"SOT-23-3","Fall Time":"24 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"+ /- 20 V","Brand":"Toshiba","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Toshiba","Forward Transconductance - Min":"450 mS","Id - Continuous Drain Current":"200 mA","Rds On - Drain...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"1(W)","Continuous Drain Current":"0.2(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.1V @ 250\u00b5A","Series":"-","Package / Case":"TO-236-3, SC-59, SOT-23-3","Supplier Device Package":"SOT-23","Datasheets":"T2N7002AK","Rds On (Max) @ Id, Vgs":"3.9 Ohm @ 100mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"320mW","Standard Package":"3,000","Input Capa...