Product Datasheet Search Results:
- SSM3K104TU
- Toshiba
- SSM3K104TU
- SSM3K104TU(TE85L)
- Toshiba
- MOSFET Vds=20V Id=3A 3Pin
Product Details Search Results:
Toshiba.co.jp/SSM3K104TU
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0560 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Tran...
1513 Bytes - 06:43:09, 17 November 2024
Toshiba.co.jp/SSM3K104TU(TE85L)
{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"20 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"10 S / 6 S","Brand":"Toshiba","Id - Continuous Drain Current":"3 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"70 mOhms","Package / Case":"UFM-3","Vgs - Gate-Source Breakdown Voltage":"12 V","Con...
1611 Bytes - 06:43:09, 17 November 2024
Documentation and Support
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SSM3K104TU.pdf | 0.15 | 1 | Request |