Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Tran...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 20 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"4 S / 2.4 S","Brand":"Toshiba","Id - Continuous Drain Current":"- 2 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"175 mOhms","Package / Case":"UFM-3","Vgs - Gate-Source Breakdown Voltage":"8 V"...