Datasheet.Directory

{"Category":"Power MOSFET","Dimensions":"5 x 4 x 1.55 mm","Maximum Continuous Drain Current":"16.5 A","Width":"4 mm","Maximum Drain Source Voltage":"30 V","Package Type":"SO-8","Number of Elements per Chip":"1","Configuration":"Quad Drain, Triple Source","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"23.5 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"18 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"1525 pF @ 15 V","Lengt...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"16.5A (Tc)","Gate Charge (Qg) @ Vgs":"35nC @ 10V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Multiple Fabracation Changes09/Jul/2014","Rds On (Max) @ Id, Vgs":"9 mOhm @ 10A, 10V","Datasheets":"SI4884BDY","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vds...