Datasheet.Directory

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.25 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"450mV @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"2.8A (Ta)","Gate Charge (Qg) @ Vgs":"14.5nC @ 4.5V","Product Photos":"SOT-23-3","Product Training Modules":"Diode Handling and Mounting","Rds On (Max) @ Id, Vgs":"120 mOhm @ 2.8A, 4.5V","Datasheets":"SI2301","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":...

{"Category":"Power MOSFET","Configuration":"Single","Mounting Type":"Surface Mount","Channel Mode":"Enhancement","Length":"3.04 mm","Channel Type":"P","Typical TurnOff Delay Time":"30 ns","Maximum Drain Source Resistance":"0.15 \u03a9","Package Type":"TO-236","Number of Elements per Chip":"1","Minimum Operating Temperature":"-55 \u00b0C","Forward Diode Voltage":"-1.2 V","Height":"1.02 mm","Maximum Operating Temperature":"+150 \u00b0C","Pin Count":"3"}...

{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-236, 3 PIN","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.2 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration"...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...