Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"6.5A, 7.9A","Gate Charge (Qg) @ Vgs":"17nC @ 10V","Product Photos":"8-SOIC","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"29 mOhm @ 6.5A, 10V","Datasheets":"FDS6986AS","FET Type":"2 N-Channe...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Rise Time":"9@Q 1|4@Q 1|15@Q 2|6@Q 2 ns","Typical Turn-Off Delay Time":"24@Q 1|13@Q 1|25@Q 2|15@Q 2 ns","Description":"Value","Maximum Continuous Drain Current":"6.5@Q 1|7.9@Q 2 A","Package":"8SOIC N","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b116@Q 1|\u00b120@Q 2 V","Typical Turn-On Delay Time":"10@Q 1|9@Q 2|11@Q 2 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"29@10V@Q 1|20@10V@...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.9 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0290 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Status":"ACTIVE","Mfr Package Description":"4 PIN","Operating Temperature-Min":"-25 Cel","Hysteresis Ratio-Nom":"0.6500","Operating Temperature-Max":"60 Cel","Shape":"RECTANGULAR","Output Current-Max":"50 A","Optoelectronic Device Type":"LOGIC OUTPUT","Application":"SWITCHING","Infrared Range":"Yes","Number of Functions":"1","Configuration":"COMPLEX","Operating Supply Voltage-Min":"4.5 V"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b116@Q 1/\u00b120@Q 2(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5@Q 1/7.9@Q 2(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...