Product Datasheet Search Results:

S524C20D10-R1.pdf22 Pages, 102 KB, Original
S524C20D10-R1
Samsung Semiconductor Division
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
S524C20D10-R1T.pdf22 Pages, 102 KB, Original
S524C20D10-R1T
Samsung Semiconductor Division
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

Product Details Search Results:

Samsung.com/S524C20D10-R1
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"5...
1593 Bytes - 15:40:50, 15 November 2024
Samsung.com/S524C20D10-R1T
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"5...
1599 Bytes - 15:40:50, 15 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
MA-50-10-R1_4-E-RG.pdf0.371Request
MA-23-10-R1_8.pdf0.331Request
MA-40-10-R1_8-E-RG.pdf1.101Request
MA-40-10-R1_4-EN.pdf1.101Request
MA-63-10-R1_4-E-RG.pdf0.061Request
G27-10-R1.pdf1.851Request
LEHZ20K2-10-R1.pdf9.221Request
LEHZ20LK2-10-R1.pdf9.221Request