Product Datasheet Search Results:
- S524C20D10-R1
- Samsung Semiconductor Division
- 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
- S524C20D10-R1T
- Samsung Semiconductor Division
- 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Product Details Search Results:
Samsung.com/S524C20D10-R1
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"5...
1593 Bytes - 15:40:50, 15 November 2024
Samsung.com/S524C20D10-R1T
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"5...
1599 Bytes - 15:40:50, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
MA-50-10-R1_4-E-RG.pdf | 0.37 | 1 | Request | |
MA-23-10-R1_8.pdf | 0.33 | 1 | Request | |
MA-40-10-R1_8-E-RG.pdf | 1.10 | 1 | Request | |
MA-40-10-R1_4-EN.pdf | 1.10 | 1 | Request | |
MA-63-10-R1_4-E-RG.pdf | 0.06 | 1 | Request | |
G27-10-R1.pdf | 1.85 | 1 | Request | |
LEHZ20K2-10-R1.pdf | 9.22 | 1 | Request | |
LEHZ20LK2-10-R1.pdf | 9.22 | 1 | Request |