Product Datasheet Search Results:

RQJ0304DQDQSTL-E.pdf10 Pages, 129 KB, Original
RQJ0304DQDQSTL-E
Renesas Electronics
2.6 A, 30 V, 0.42 ohm, P-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/RQJ0304DQDQSTL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1548 Bytes - 06:33:14, 17 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
STL-ETH2.pdf1.191Request