Product Datasheet Search Results:
- RQJ0304DQDQSTL-E
- Renesas Electronics
- 2.6 A, 30 V, 0.42 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/RQJ0304DQDQSTL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1548 Bytes - 06:33:14, 17 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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STL-ETH2.pdf | 1.19 | 1 | Request |