Product Datasheet Search Results:
- RJK6012DPP-00-T2
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
- RJK6012DPP-00-T2
- Renesas Electronics
- 10 A, 600 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Renesas.com/RJK6012DPP-00-T2
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...
1554 Bytes - 12:27:15, 24 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
WRF100-T270C.pdf | 1.58 | 1 | Request | |
WRF100-T200.pdf | 1.58 | 1 | Request | |
WRF100-T200C.pdf | 1.58 | 1 | Request | |
WRF100-T240C.pdf | 1.58 | 1 | Request |