Product Datasheet Search Results:
5 Pages, 63 KB, Original- RJK2006DPE-TL-E
- Renesas Technology / Hitachi Semiconductor
- Transistor Mosfet N-CH 200V 40A 3LDPAK (S)-(1) T/R
10 Pages, 238 KB, Original- RJK2006DPE-TL-E
- Renesas Electronics
- 40 A, 200 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/RJK2006DPE-TL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"40 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0590 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1545 Bytes - 10:45:54, 09 January 2025
