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QJD1210006.pdf4 Pages, 483 KB, Original

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Pwrx.com/QJD1210006
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON CARBIDE","Drain Current-Max (ID)":"100 A","EU RoHS Compliant":"Yes","Configuration":"COMPLEX","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"250 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1491 Bytes - 04:54:16, 26 November 2024

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