Product Datasheet Search Results:
- Q67040-S4199
- Infineon Technologies Ag
- 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Infineon.com/Q67040-S4199
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"340 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","China R...
1571 Bytes - 01:41:51, 18 November 2024
Documentation and Support
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541999.pdf | 0.06 | 1 | Request | |
194199.pdf | 0.13 | 1 | Request | |
8084199.pdf | 0.13 | 1 | Request | |
541998.pdf | 0.05 | 1 | Request | |
SI_23419917.pdf | 0.85 | 1 | Request | |
SI_109784199.pdf | 1.46 | 1 | Request | |
SI_41996187.pdf | 1.94 | 1 | Request | |
SI_41996199.pdf | 5.56 | 1 | Request | |
7B419905006B.pdf | 0.04 | 1 | Request | |
1SDX224199R1.pdf | 0.06 | 1 | Request | |
7B419904052BV.pdf | 0.04 | 1 | Request | |
7B419904052BW.pdf | 0.04 | 1 | Request |