Product Datasheet Search Results:

PHD10N10E118.pdf5 Pages, 216 KB, Scan
PHD10N10E118
Nxp
11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Nxp.com/PHD10N10E118
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"35 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Tr...
1416 Bytes - 11:42:00, 16 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
SS5V1-10PHD1-02U-C4-D.pdf10.991Request
SS5V2-10PHD1-02U-C8.pdf10.991Request