Product Datasheet Search Results:
- PHD10N10E118
- Nxp
- 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Nxp.com/PHD10N10E118
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"35 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Tr...
1416 Bytes - 11:42:00, 16 November 2024