Datasheet.Directory

{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"0.850 X 0.850 INCH, DIE-2","Terminal Form":"NO LEAD","Package Style":"UNCASED CHIP","Rep Pk Reverse Voltage-Max":"40 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"10 A","Application":"EFFICIENCY","Number of Elements":"1","Non-rep Pk Forward Current-Max":"250 A","Terminal Position":"UPPER","Diode Type":"RECTIFIER DIODE","Package Shape":"SQUARE","Configuration":"SINGLE","Technology...

{"Status":"ACTIVE","Diode Type":"RECTIFIER DIODE"}...

{"Status":"ACTIVE","Diode Type":"RECTIFIER DIODE"}...

{"I(F) Max. (A) Forward Current":"6.5m","Peak Wavelength (m)":"585n","Color":"Yellow","Package":"DIP","Character Height (mm)":"17","Package Style (Basic)":"DIP","Number of Characters":"2","Iv Min.(cd) Luminous Intensity":"200u","Connection Type":"Not Applic"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 90\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"34A (Tc)","Gate Charge (Qg) @ Vgs":"29nC @ 10V","Product Photos":"TO252-3","Rds On (Max) @ Id, Vgs":"32 mOhm @ 34A, 10V","Datasheets":"IPD320N20N3 G","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015","Drain to ...