Product Datasheet Search Results:

NP100P06PLG-E2-AY.pdf7 Pages, 180 KB, Original
NP100P06PLG-E2-AY
Nec Electronics
MOS FIELD EFFECT TRANSISTOR
NP100P06PLG-E2-AY.pdf9 Pages, 293 KB, Original
NP100P06PLG-E2-AY
Renesas Electronics
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB

Product Details Search Results:

Renesas.com/NP100P06PLG-E2-AY
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"420 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"100 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0078 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM...
1675 Bytes - 01:11:26, 15 November 2024

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