Product Datasheet Search Results:
- MV1622
- Aeroflex / Metelics
- 8.2 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- MV1622B
- Api Electronics Group
- VHF-UHF BAND, 8.2 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- MV1622C
- Api Electronics Group
- VHF-UHF BAND, 8.2 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- MV1622
- Crystalonics
- Voltage Variable Capacitance Diodes Data Book 1976
- MV1622
- Motorola / Freescale Semiconductor
- Diode, SILICON EPICA
- MV1622
- Knox Semiconductor, Inc.
- ABRUPT VARACTOR DIODES
- MV1622
- Msi Electronics, Inc.
- Abrupt / Hyperabrupt Glass Packaged Tuning Diodes
- MV1622B
- Msi Electronics, Inc.
- 20V Vrrm, 8.2pF Capacitance Varactor Diode
- MV1622BCHIP
- Msi Electronics, Inc.
- 20V Vrrm, 8.2pF Capacitance Varactor Diode
- MV1622C
- Msi Electronics, Inc.
- 20V Vrrm, 8.2pF Capacitance Varactor Diode
- MV1622CCHIP
- Msi Electronics, Inc.
- 20V Vrrm, 8.2pF Capacitance Varactor Diode
Product Details Search Results:
Aeroflex.com/MV1622
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"9.76 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position...
1347 Bytes - 12:01:35, 15 November 2024
Apitech.com/MV1622
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"3...
1298 Bytes - 12:01:35, 15 November 2024
Apitech.com/MV1622B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"30...
1388 Bytes - 12:01:35, 15 November 2024
Apitech.com/MV1622C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"30...
1391 Bytes - 12:01:35, 15 November 2024
Msi.com/MV1622A
{"Status":"Discontinued","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
740 Bytes - 12:01:35, 15 November 2024
Various/MV1622B
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
836 Bytes - 12:01:35, 15 November 2024
Various/MV1622BCHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 12:01:35, 15 November 2024
Various/MV1622C
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
837 Bytes - 12:01:35, 15 November 2024
Various/MV1622CCHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 12:01:35, 15 November 2024
Various/MV1622CHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
812 Bytes - 12:01:35, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
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