Product Datasheet Search Results:

MV1622.pdf1 Pages, 33 KB, Original
MV1622
Aeroflex / Metelics
8.2 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1622B.pdf1 Pages, 74 KB, Scan
MV1622B
Api Electronics Group
VHF-UHF BAND, 8.2 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1622C.pdf1 Pages, 74 KB, Scan
MV1622C
Api Electronics Group
VHF-UHF BAND, 8.2 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MV1622.pdf1 Pages, 42 KB, Scan
MV1622
Crystalonics
Voltage Variable Capacitance Diodes Data Book 1976
MV1622.pdf2 Pages, 213 KB, Original
MV1622.pdf1 Pages, 33 KB, Original
MV1622.pdf2 Pages, 117 KB, Scan
MV1622
Msi Electronics, Inc.
Abrupt / Hyperabrupt Glass Packaged Tuning Diodes
MV1622B.pdf2 Pages, 117 KB, Scan
MV1622B
Msi Electronics, Inc.
20V Vrrm, 8.2pF Capacitance Varactor Diode
MV1622BCHIP.pdf2 Pages, 117 KB, Scan
MV1622BCHIP
Msi Electronics, Inc.
20V Vrrm, 8.2pF Capacitance Varactor Diode
MV1622C.pdf2 Pages, 117 KB, Scan
MV1622C
Msi Electronics, Inc.
20V Vrrm, 8.2pF Capacitance Varactor Diode
MV1622CCHIP.pdf2 Pages, 117 KB, Scan
MV1622CCHIP
Msi Electronics, Inc.
20V Vrrm, 8.2pF Capacitance Varactor Diode

Product Details Search Results:

Aeroflex.com/MV1622
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"9.76 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position...
1347 Bytes - 12:01:35, 15 November 2024
Apitech.com/MV1622
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"3...
1298 Bytes - 12:01:35, 15 November 2024
Apitech.com/MV1622B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"30...
1388 Bytes - 12:01:35, 15 November 2024
Apitech.com/MV1622C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"30...
1391 Bytes - 12:01:35, 15 November 2024
Msi.com/MV1622A
{"Status":"Discontinued","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
740 Bytes - 12:01:35, 15 November 2024
Various/MV1622B
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
836 Bytes - 12:01:35, 15 November 2024
Various/MV1622BCHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 12:01:35, 15 November 2024
Various/MV1622C
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
837 Bytes - 12:01:35, 15 November 2024
Various/MV1622CCHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 12:01:35, 15 November 2024
Various/MV1622CHIP
{"C1/C2 Min. Capacitance Ratio":"2.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"300","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
812 Bytes - 12:01:35, 15 November 2024

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