Product Datasheet Search Results:
- M12L64164A-6TG
- Elite Semiconductor Memory Technology, Inc.
- 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
- M12L64164A-6TG
- N/a
- 1M x 16 Bit x 4 Banks Synchronous DRAM
Product Details Search Results:
Esmt.com.tw/M12L64164A-6TG
{"Terminal Pitch":"0.8000 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"GULL WING","Operating Temperature-Max":"70 Cel","Number of Words Code":"4M","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"4.19E6 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"6.71E7 deg","Supply Voltage-Max (Vsup)":"3.6 V","Number of Ports":"1","Supply Vo...
1623 Bytes - 13:59:55, 24 November 2024
Documentation and Support
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DARC-C4-M12L-M.pdf | 0.12 | 1 | Request | |
E2B-M12LS02-WP-C1_5M.pdf | 6.42 | 1 | Request | |
E2A-M12LS04-WP-C2_2M.pdf | 0.30 | 1 | Request | |
E2A-M12LN08-M1-C2.pdf | 0.30 | 1 | Request | |
E2B-M12LS04-WP-C2_2M.pdf | 6.42 | 1 | Request | |
E2B-M12LN05-WP-C1_5M.pdf | 6.42 | 1 | Request | |
E2B-M12LS04-WP-B2_5M.pdf | 6.42 | 1 | Request | |
E2B-M12LN08-WP-B2_2M.pdf | 6.42 | 1 | Request | |
E2B-M12LS04-WP-B2_2M.pdf | 6.42 | 1 | Request | |
E2A-M12LS04-WP-C2_5M.pdf | 0.30 | 1 | Request | |
E2A-M12LN08-WP-B1_2M.pdf | 0.30 | 1 | Request | |
E2B-M12LN05-WP-C2_2M.pdf | 6.42 | 1 | Request |