Product Datasheet Search Results:
5 Pages, 577 KB, Original- LT2N7002
- Lite-on Electronics, Inc.
- 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 419 KB, Original- LT2N7002E
- Lite-on Electronics, Inc.
- 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
6 Pages, 546 KB, Original- LT2N7002
- Lite-on Semiconductor Corp.
- 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
58 Pages, 2916 KB, Original- LT2N7002
- World Products Inc.
- LT2N7002
58 Pages, 2916 KB, Original- LT2N7002E
- World Products Inc.
- LT2N7002E
Product Details Search Results:
Liteon.com.tw/LT2N7002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SOT-23, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3000 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL...
1418 Bytes - 15:49:48, 17 November 2024
Liteon.com.tw/LT2N7002E
{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...
1546 Bytes - 15:49:48, 17 November 2024
Liteon-semi.com/LT2N7002
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SOT-23, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3000 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL...
1425 Bytes - 15:49:48, 17 November 2024
World_products_inc_/LT2N7002
749 Bytes - 15:49:48, 17 November 2024
World_products_inc_/LT2N7002E
763 Bytes - 15:49:48, 17 November 2024
