Product Datasheet Search Results:
27 Pages, 636 KB, Original- K4H510438J-LIB00
- Samsung Semiconductor Division
- 128M X 4 DDR DRAM, 0.75 ns, PDSO66
Product Details Search Results:
Samsung.com/K4H510438J-LIB00
{"Terminal Finish":"NOT SPECIFIED","Terminal Pitch":"0.6500 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Number of Words Code":"128M","Supply Voltage-Nom (Vsup)":"2.5 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Number of Words":"1.34E8 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"5.37E8 deg","EU RoHS ...
1749 Bytes - 04:39:29, 19 December 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
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| 4GAACIB000I1L30.pdf | 0.04 | 1 | Request | |
| 4GAACIB00000000.pdf | 0.04 | 1 | Request | |
| 4GAACIB0030000X.pdf | 0.04 | 1 | Request | |
| 4GAACIB00000L3X.pdf | 0.04 | 1 | Request | |
| 4GAAABIB0000L3X.pdf | 0.04 | 1 | Request | |
| 4GAACIB003I1L30.pdf | 0.04 | 1 | Request | |
| 4GAACIB003I100X.pdf | 0.04 | 1 | Request | |
| 4GAABAIB000000X.pdf | 0.04 | 1 | Request | |
| 4GAAACIB00I100X.pdf | 0.04 | 1 | Request | |
| 4GAAABIB00I1L3X.pdf | 0.04 | 1 | Request | |
| 4GAABAIB00I1L3X.pdf | 0.04 | 1 | Request | |
| 4GAAABIB000000X.pdf | 0.04 | 1 | Request |
