Product Datasheet Search Results:
18 Pages, 167 KB, Original- K4H280838E-TCCC
- Samsung Semiconductor Division
- 16M X 8 DDR DRAM, 0.7 ns, PDSO66
18 Pages, 167 KB, Original- K4H280838E-TCCC0
- Samsung Semiconductor Division
- 16M X 8 DDR DRAM, 0.65 ns, PDSO66
Product Details Search Results:
Samsung.com/K4H280838E-TCCC
{"Terminal Finish":"TIN LEAD","Terminal Pitch":"0.6500 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"GULL WING","Operating Temperature-Max":"70 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"2.6 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1.34E8 deg","Supply Voltage-Max (Vsup)":"2.7 V","N...
1654 Bytes - 18:07:06, 24 January 2025
Samsung.com/K4H280838E-TCCC0
{"Terminal Finish":"TIN LEAD","Terminal Pitch":"0.6500 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"GULL WING","Operating Temperature-Max":"70 Cel","Number of Words Code":"16M","Supply Voltage-Nom (Vsup)":"2.6 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.68E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1.34E8 deg","Supply Voltage-Max (Vsup)":"2.7 V","N...
1659 Bytes - 18:07:06, 24 January 2025
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