Product Datasheet Search Results:
- K4D26323QV-VC250
- Samsung Semiconductor Division
- 4M X 32 DDR DRAM, 0.45 ns, PBGA144
Product Details Search Results:
Samsung.com/K4D26323QV-VC250
{"Terminal Pitch":"0.8000 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"BALL","Operating Temperature-Max":"65 Cel","Number of Words Code":"4M","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"COMMERCIAL","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"0.0 Cel","Number of Words":"4.19E6 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1.34E8 deg","Supply Voltage-Max (Vsup)":"2.1 V","Number of Ports":"1","Sup...
1624 Bytes - 09:58:00, 29 December 2024