Product Datasheet Search Results:
18 Pages, 314 KB, Original- K4D26323QV-VC200
- Samsung Semiconductor Division
- 4M X 32 DDR DRAM, 0.35 ns, PBGA144
Product Details Search Results:
Samsung.com/K4D26323QV-VC200
{"Terminal Pitch":"0.8000 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"BALL","Operating Temperature-Max":"65 Cel","Number of Words Code":"4M","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"COMMERCIAL","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"0.0 Cel","Number of Words":"4.19E6 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1.34E8 deg","Supply Voltage-Max (Vsup)":"2.1 V","Number of Ports":"1","Sup...
1624 Bytes - 17:29:41, 18 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| LVC200-S04.pdf | 17.37 | 1 | Request | |
| LVC200-S06.pdf | 17.37 | 1 | Request | |
| LVC200-S03.pdf | 17.37 | 1 | Request | |
| LVC200-S07.pdf | 17.37 | 1 | Request | |
| M2413VC200.pdf | 0.15 | 1 | Request | |
| NX037VC200.pdf | 0.11 | 1 | Request |
