Product Datasheet Search Results:

JANSR2N7425.pdf8 Pages, 165 KB, Original
JANSR2N7425
International Rectifier
35 A, 100 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
JANSR2N7425U.pdf8 Pages, 123 KB, Original
JANSR2N7425U
International Rectifier
38 A, 100 V, 0.071 ohm, P-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/JANSR2N7425
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1513 Bytes - 15:11:12, 14 November 2024
Irf.com/JANSR2N7425U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0710 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1562 Bytes - 15:11:12, 14 November 2024

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