Product Datasheet Search Results:

JANSR2N7423.pdf8 Pages, 123 KB, Original
JANSR2N7423
International Rectifier
14 A, 200 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
JANSR2N7423U.pdf8 Pages, 125 KB, Original
JANSR2N7423U
International Rectifier
14 A, 200 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/JANSR2N7423
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1509 Bytes - 15:45:50, 14 November 2024
Irf.com/JANSR2N7423U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1550 Bytes - 15:45:50, 14 November 2024

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