Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"10 dB","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","Transistor Application":"AMPLIFIER","Mfr Package Description":"HERMETIC SEALED PACKAGE-4","Operating Mode"...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACKAGE-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"4","Nu...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"UNSPECIFIED","Status":"DISCONTINUED","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"10 dB","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Mfr Package Description":"DIE","Operating Mode":"DEPLETION","Number of...

{"@V(DS) (V) (Test Condition)":"15","C(iss) Max. (F)":"4.0p","V(GS)off Max. (V)":"6.0","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"15m","V(BR)DSS (V)":"35","V(BR)GSS (V)":"35","g(fs) Min. (S) Trans. conduct.":"4.5m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"7.5m"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"4 dB","Drain Current-Max (ID)":"0.0150 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"30 V","Transistor Application":"AMPLIFIER","Mfr Package Description":"TO-72, 3 PIN","Operatin...

{"Category":"Discrete Semiconductor Products","Current Drain (Id) - Max":"-","Package / Case":"TO-206AF, TO-72-4 Metal Can","Product Photos":"TO-72 Series 2N4416A","Voltage - Cutoff (VGS off) @ Id":"2.5V @ 1nA","Datasheets":"2N4416(A)","FET Type":"N-Channel","Standard Package":"2,000","Voltage - Breakdown (V(BR)GSS)":"35V","Drain to Source Voltage (Vdss)":"35V","Resistance - RDS(On)":"-","RoHS Information":"RoHS Declaration of Compliance","Online Catalog":"N-Channel JFETs","Family":"JFETs (Junction Field Ef...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Mfr Package Description":"TO-72, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"4","Number of Ele...

{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"4 dB","Drain Current-Max (ID)":"0.0150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"30 V","Transistor Application":"AMPLIFIER"...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"TO-72, CASE 20-03, 4 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"0.8000 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Numbe...

{"@V(DS) (V) (Test Condition)":"15","C(iss) Max. (F)":"4.0p","Mil Number":"JAN2N4416A","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"15m","V(BR)DSS (V)":"35","V(BR)GSS (V)":"35","g(fs) Min. (S) Trans. conduct.":"4.5m","V(GS)off Max. (V)":"6.0","Package":"TO-72","Military":"Y","g(fs) Max, (S) Trans. conduct,":"7.5m"}...

{"@V(DS) (V) (Test Condition)":"15","C(iss) Max. (F)":"4.0p","Mil Number":"JANTX2N4416A","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"15m","V(BR)DSS (V)":"35","V(BR)GSS (V)":"35","g(fs) Min. (S) Trans. conduct.":"4.5m","V(GS)off Max. (V)":"6.0","Package":"TO-72","Military":"Y","g(fs) Max, (S) Trans. conduct,":"7.5m"}...

{"@V(DS) (V) (Test Condition)":"15","C(iss) Max. (F)":"4.0p","Mil Number":"JANTXV2N4416A","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"15m","V(BR)DSS (V)":"35","V(BR)GSS (V)":"35","g(fs) Min. (S) Trans. conduct.":"4.5m","V(GS)off Max. (V)":"6.0","Package":"TO-72","Military":"Y","g(fs) Max, (S) Trans. conduct,":"7.5m"}...