Datasheet.Directory

{"Reverse Capacitance (Typ)":"11@960V(pF)","Channel Mode":"Enhancement","Continuous Drain Current":"8(A)","Mounting":"Through Hole","Forward Transconductance (Typ)":"5.5(S)","Rad Hardened":"No","Frequency (Max)":"100(MHz)","Channel Type":"N","Output Capacitance (Typ)@Vds":"86@960V(pF)","Input Capacitance (Typ)@Vds":"1900@960V(pF)","Operating Temp Range":"-55C to 175C","Package Type":"ISOPLUS 247","Drain Source Voltage (Max)":"1200(V)","Power Dissipation (Max)":"3000(mW)","Screening Level":"Military","Pin Co...

{"Continuous Drain Current Id:":"8 A","Operating Frequency Max:":"-","Transistor Type:":"RF MOSFET","Drain Source Voltage Vds:":"1.2 kV","MSL:":"-","No. of Pins:":"3","Power Dissipation Pd:":"250 W","RF Transistor Case:":"ISOPLUS247","Operating Temperature Max:":"175 \u00b0C","Operating Temperature Min:":"-55 \u00b0C","Operating Frequency Min:":"-","SVHC:":"To Be Advised"}...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"1200 V","Transistor Application":"SWITCHING","Case Connection":"I...