Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"60A","Switching Energy":"600\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.3V @ 15V, 32A","Td (on/off) @ 25\u00b0C":"25ns/100ns","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"110nC","Product Photos":"IXXH50N60C3","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"50ns","Datasheets":"IXGH32N60BU1","Standard Package":"30","Test Condition":"480V, 32A, 4.7 Ohm, 15V","PCN Obsolescenc...

{"V(CE)sat Max.(V)":"2.5","V(BR)CES (V)":"600","Absolute Max. Power Diss. (W)":"200","I(GES) Max. (A)":"100n","t(d)off Max. (s) Off time":"175n","g(fe) Min. (S) Trans. admitt.":"15","V(BR)GES (V)":"20","I(C) Abs.(A) Collector Current":"60","g(fe) Max. (S) Trans. admitt.":"20","I(CES) Max. (A)":"200u","Package":"TO-247SMD","@V(CE) (V) (Test Condition)":"10","V(GE)th Max. (V)":"5.5","td(on) Max (s) On time delay":"25n","@I(C) (A) (Test Condition)":"32","t(r) Max. (s) Rise time":"30n","t(f) Max. (s) Fall time....

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Turn-off Time-Nom (toff)":"240 ns","Collector Current-Max (IC)":"60 A","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"50 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","Transist...