Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"370(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge (Qg) @ Vgs":"130nC @ 4.5V","Rds On (Max) @ Id, Vgs":"4.3 mOhm @ 110A, 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Mosfet Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","PCN Other":"Multiple Changes 06\/Oct\/2014","Datasheets":...