Product Datasheet Search Results:

IRHMS597260.pdf8 Pages, 245 KB, Original
IRHMS597260
International Rectifier
30 A, 200 V, 0.103 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
IRHMS597260PBF.pdf8 Pages, 245 KB, Original
IRHMS597260PBF
International Rectifier
32 A, 200 V, 0.103 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA

Product Details Search Results:

Irf.com/IRHMS597260
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"332 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1030 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1543 Bytes - 11:41:40, 22 November 2024
Irf.com/IRHMS597260PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"354 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1030 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"128 A","Channel Type":"P-CHANNEL","FET Te...
1557 Bytes - 11:41:40, 22 November 2024

Documentation and Support

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