Product Datasheet Search Results:

IRHM4250U.pdf12 Pages, 266 KB, Original
IRHM4250U
International Rectifier
26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
IRHM4250UPBF.pdf12 Pages, 266 KB, Original
IRHM4250UPBF
International Rectifier
26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/IRHM4250U
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1463 Bytes - 23:00:33, 22 March 2025
Irf.com/IRHM4250UPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"...
1529 Bytes - 23:00:33, 22 March 2025

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
VM250U-02-35BA.pdf16.081Request
VM250U-02-35RA.pdf16.081Request
VM250U-N02-35BA.pdf16.081Request
US2:WBT312X250UNH.pdf4.641Request
US2:WBT312X250U.pdf4.641Request
US2:HS250U.pdf3.251Request
HJD3250U18.pdf0.041Request
E2J3250U18.pdf0.041Request
CDE250U50.pdf0.031Request
ERJ12NF8250U.pdf0.711Request
ERJS12D8250U.pdf0.481Request
ERJXGNF8250U.pdf0.711Request