Product Datasheet Search Results:

IRHM4250D.pdf12 Pages, 266 KB, Original
IRHM4250D
International Rectifier
26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
IRHM4250DPBF.pdf12 Pages, 266 KB, Original
IRHM4250DPBF
International Rectifier
26 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/IRHM4250D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1461 Bytes - 22:38:23, 22 March 2025
Irf.com/IRHM4250DPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"...
1532 Bytes - 22:38:23, 22 March 2025

Documentation and Support

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