Product Datasheet Search Results:

IRG7PH50K10DPBF.pdf12 Pages, 550 KB, Original
IRG7PH50K10DPBF
Infineon Technologies Ag
Trans IGBT Chip N-CH 1200V 90A 400000mW 3-Pin(3+Tab) TO-247AC Tube
IRG7PH50K10DPBF.pdf1 Pages, 245 KB, Original
IRG7PH50K10DPBF
International Rectifier
IGBT Transistors 1200V UltraFast Discrete IGBT

Product Details Search Results:

Infineon.com/IRG7PH50K10DPBF
{"Collector Current (DC) ":"90(A)","Operating Temperature (Min)":"-40C","Collector-Emitter Voltage":"1200(V)","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b130(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"TO-247AC","Configuration":"Single","Pin Count":"3 +Tab"}...
1538 Bytes - 02:37:07, 31 December 2024
Irf.com/IRG7PH50K10DPBF
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"90A","Switching Energy":"2.3mJ (on), 1.6mJ (off)","Vce(on) (Max) @ Vge, Ic":"2.4V @ 15V, 35A","Td (on/off) @ 25\u00b0C":"90ns/340ns","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"300nC","Product Photos":"TO-247AC Pkg","PCN Assembly/Origin":"IGBT Backend Wafer Processing 23/Oct/2013 IGBT Wafer Fab Change 08/Nov/2013","Voltage - Collector Emitter Breakdown (Max)":"1200V","Reverse Recovery Time (trr)":"130ns","...
1998 Bytes - 02:37:07, 31 December 2024

Documentation and Support

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