Product Datasheet Search Results:
7 Pages, 166 KB, Scan- IRFP350FI
- Stmicroelectronics, Inc.
- 10 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
Product Details Search Results:
St.com/IRFP350FI
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"435 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1457 Bytes - 00:32:25, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRFP360.pdf | 0.04 | 1 | Request | |
| IRFP3415.pdf | 0.49 | 1 | Request | |
| IRFP3710.pdf | 0.15 | 1 | Request | |
| IRFP3077.pdf | 0.29 | 1 | Request | |
| IRFP3306.pdf | 0.29 | 1 | Request | |
| IRFP3206.pdf | 0.29 | 1 | Request | |
| IRFP3703.pdf | 0.17 | 1 | Request |
