Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3,TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"30","PCN Design/Specification":"Heat Sink Drawing Update 11/Feb/2014","Datasheets":"IRFP150A","Rds On (Max) @ Id, Vgs":"40 mOhm @ 21.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"193W","Mounting Type":"Through Hole","Package / Case":"TO-3P-3, SC-65-3","Supplier Device...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"42(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"160(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"42(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"160(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"42A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-247AC Pkg","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"36 mOhm @ 23A, 10V","Datasheets":"IRFP150MPBF","FET Type":"MOSFET N-Channel, Metal ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRFP150N Saber Model IRFP150N Spice Model","Product Photos":"TO-247AC Pkg","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"25","Supplier Device Package":"TO-247AC","Datasheets":"IRFP150N","Rds On (Max) @ Id, Vgs":"36 mOhm @ 23A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"160W","Other Names":"*IRFP150N","Package / Case":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"42A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-247AC Pkg","PCN Design/Specification":"Pb/Sn/Ag Material Update 09/Feb/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"36 mOhm @ 23A, 10V","Datasheets":"IRFP150NPbF","FET Type":"MOSFET N-Chan...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"46 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0240 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"230 A","Channel Type":"N-C...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"193(W)","Continuous Drain Current":"43(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-3P","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"160 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"180","g(fs) Max, (S) Trans. conduct,":"20","I(D) Abs. Max.(A) Drain Curr.":"26","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"89n","r(DS)on Max. (Ohms)":"55m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"160","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"13","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"20","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package...