Datasheet.Directory

{"Status":"DISCONTINUED","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, DIP-4","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Channel Type":"N-CHANNEL","Drain-source On Resistance-Max":"1.5 ohm","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)D Series Side 1 IR(F,L)D Series Side 2","Package / Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"600mA (Ta)","Gate Charge (Qg) @ Vgs":"8.2nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 360mA, 10V","Datasheets":"IRFD210","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,500","Drain to Source Voltage (Vd...

{"Category":"Power MOSFET","Dimensions":"6.29 x 5 x 3.37 mm","Maximum Continuous Drain Current":"0.6 A","Width":"5 mm","Maximum Drain Source Voltage":"200 V","Package Type":"HVMDIP","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 8.2 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"8.2 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"140 pF @ 25 V","Length":"...