Product Datasheet Search Results:
1 Pages, 28 KB, Scan- IRFBG30-006
- Vishay Presicion Group
- 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 28 KB, Scan- IRFBG30-006PBF
- Vishay Presicion Group
- 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Vishay.com/IRFBG30-006
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1454 Bytes - 05:07:16, 06 November 2024
Vishay.com/IRFBG30-006PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-O...
1512 Bytes - 05:07:16, 06 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| MF-2F230-006.230MFA.pdf | 3.90 | 1 | Request | |
| MF-2F230-006.230MFB.pdf | 3.90 | 1 | Request | |
| MF-2F230-006.100MFA.pdf | 3.90 | 1 | Request | |
| MF-2F230-006.232MF.pdf | 3.90 | 1 | Request | |
| MF-2F230-006.230MFC.pdf | 3.90 | 1 | Request | |
| MF-2F230-006.100MFD.pdf | 3.90 | 1 | Request |
