Datasheet.Directory

{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"60 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...

{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"74","g(fs) Max, (S) Trans. conduct,":"4.7","r(DS)on Max. (Ohms)":"140m","@V(DS) (V) (Test Condition)":"8.0","I(GSS) Max. (A)":"500n","@I(D) (A) (Test Condition)":"9.0","Package":"TO-220AB","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"170n","V(BR)DSS (V)":"50","t(f) Max. (s) Fall time.":"96n","g(fs) Min. (S) Trans. conduct.":"3.1","I(D) Abs. Drain Current (A)":"18"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"140 mOhm @ 9.3A, 10V","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Other Names":"*IRF9Z30","Packaging":"Tube","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"IRF9Z30, IRF9Z32 Packaging Information","Power - Max":"74W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Dra...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"39nC @ 10V","Product Photos":"TO-220AB","PCN Assembly/Origin":"PCN-SIL-0102014 Rev 0 23/May/2014","Rds On (Max) @ Id, Vgs":"140 mOhm @ 9.3A, 10V","Datasheets":"IRF9Z30PBF Packaging Information","FET Type":"MOSFET P-Channel, ...