Product Datasheet Search Results:
- IRF843
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 8A, 450 V/500V
- IRF843
- Fci Semiconductor
- POWER MOSFETs
- IRF843
- Frederick Components
- Power MOSFET Selection Guide
- IRF843
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- N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
- IRF843
- General Electric
- Power Transistor Data Book 1985
- IRF843
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF843R
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF843
- International Rectifier
- TRANSISTORS N-CHANNEL
- IRF843R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
- IRF843
- National Semiconductor
- N-Channel Power MOSFETs
Product Details Search Results:
Semelab.co.uk/IRF843
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source ...
1299 Bytes - 15:15:14, 14 November 2024
St.com/IRF843FI
{"C(iss) Max. (F)":"1.6n","Absolute Max. Power Diss. (W)":"40","r(DS)on Max. (Ohms)":"1.0","I(GSS) Max. (A)":"500n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.4","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"15n","V(BR)DSS (V)":"450","t(f) Max. (s) Fall time.":"30n","g(fs) Min. (S) Trans. conduct.":"4.9","I(D) Abs. Drain Current (A)":"4.0"}...
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Various/IRF843R
{"C(iss) Max. (F)":"1.2n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"7.4","I(D) Abs. Max.(A) Drain Curr.":"404","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"74n","r(DS)on Max. (Ohms)":"1.1","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"28","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"4.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1296 Bytes - 15:15:14, 14 November 2024
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