Product Datasheet Search Results:
4 Pages, 46 KB, Original- HIRF830F
- Hi-sincerity Mocroelectronics Corp.
- N-CHANNEL POWER MOSFET
6 Pages, 341 KB, Scan- IRF830FI
- Stmicroelectronics
- N-Channel Enhancement Mode Power MOS Transistors
11 Pages, 324 KB, Scan- IRF830F
- Vishay Presicion Group
- 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 Pages, 324 KB, Scan- IRF830FPBF
- Vishay Presicion Group
- 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 Pages, 324 KB, Scan- IRF830FX
- Vishay Presicion Group
- 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 Pages, 324 KB, Scan- IRF830FXPBF
- Vishay Presicion Group
- 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
St.com/IRF830FI
{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"35","V(BR)DSS (V)":"500","g(fs) Max, (S) Trans. conduct,":"3.4","I(D) Abs. Max.(A) Drain Curr.":"1.8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"155n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"15","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)t...
1287 Bytes - 15:55:04, 17 November 2024
Vishay.com/IRF830F
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1.5 ohm","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminal...
1269 Bytes - 15:55:04, 17 November 2024
Vishay.com/IRF830FPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1.5 ohm","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR",...
1331 Bytes - 15:55:04, 17 November 2024
Vishay.com/IRF830FX
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1.5 ohm","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminal...
1273 Bytes - 15:55:04, 17 November 2024
Vishay.com/IRF830FXPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1.5 ohm","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR",...
1337 Bytes - 15:55:04, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF8313.pdf | 0.25 | 1 | Request |
