Product Datasheet Search Results:
6 Pages, 150 KB, Original- IRF830A
- Fairchild Semiconductor
- Advanced Power MOSFET
7 Pages, 184 KB, Scan- IRF830AJ69Z
- Fairchild Semiconductor Corporation
- 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
8 Pages, 139 KB, Original- IRF830A
- International Rectifier
- HEXFET Power MOSFET
10 Pages, 162 KB, Original- IRF830AL
- International Rectifier
- HEXFET Power Mosfet
10 Pages, 663 KB, Original- IRF830ALPBF
- International Rectifier
- HEXFET Power MOSFET
8 Pages, 156 KB, Original- IRF830APBF
- International Rectifier
- 500V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220AB package
10 Pages, 162 KB, Original- IRF830AS
- International Rectifier
- Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)
10 Pages, 663 KB, Original- IRF830ASPBF
- International Rectifier
- HEXFET Power MOSFET
10 Pages, 162 KB, Original- IRF830ASTRL
- International Rectifier
- HEXFET Power MOSFET
10 Pages, 162 KB, Original- IRF830ASTRR
- International Rectifier
- HEXFET Power MOSFET
Product Details Search Results:
Fairchildsemi.com/IRF830AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"18 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"338 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"4.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Ty...
1500 Bytes - 05:20:22, 06 November 2024
Siliconix_vishay/IRF830APBF
795 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830A
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"620pF @ 25V","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Datasheets":"IRF830A,SiHF830A Packaging Information","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"74W","Package / Case":"TO-220-3","Mounting Type...
1622 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830AL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"-","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"I2PAK","Datasheets":"IRF830A,SiHF830A","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.1W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"620pF @ 25V","Drai...
1436 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830ALPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"5A (Tc)","Gate Charge (Qg) @ Vgs":"24nC @ 10V","Product Photos":"TO-262-3 Long Leads","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","Datasheets":"IRF830AS,AL, SiHF830AS,AL","FET Type":"MOSFET N-Channel, Metal Oxide","Standard ...
1827 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830APBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"5A (Tc)","Gate Charge (Qg) @ Vgs":"24nC @ 10V","Product Photos":"TO-220AB","PCN Assembly/Origin":"PCN-SIL-0102014 Rev 0 23/May/2014","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","Datasheets":"IRF830A,SiHF830A Packaging Information","FET Type":"MOSFET N-Chann...
1922 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830APBF-BE3
839 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830AS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"620pF @ 25V","Series":"-","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF830A,SiHF830A","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Moun...
1561 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830ASPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Catalog Drawings":"IR(F,L,Z) Series Side 1 IR(F,L,Z) Series Side 2","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"5A (Tc)","Gate Charge (Qg) @ Vgs":"24nC @ 10V","Product Photos":"TO-263","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","Datasheets":"IRF830AS,AL, SiHF830AS,AL","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Packag...
1829 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830ASTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF830A,SiHF830A","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain ...
1572 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830ASTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF830AS,AL, SiHF830AS,AL","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount...
1611 Bytes - 05:20:22, 06 November 2024
Vishay.com/IRF830ASTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.1 W","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":...
1548 Bytes - 05:20:22, 06 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF8313.pdf | 0.25 | 1 | Request |
