Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.1(W)","Continuous Drain Current":"23(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Automotive","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET MX","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Package / Case":"DirectFET\u2122 Isometric MX","Gate Charge (Qg) @ Vgs":"38nC @ 4.5V","Rds On (Max) @ Id, Vgs":"2.5 mOhm @ 23A, 10V","PCN Assembly/Origin":"DirectFET Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20/Feb/2014","Datasheets":"IRF8306M(TR)PbF","FET Ty...