Product Datasheet Search Results:
10 Pages, 857 KB, Original- IRF820BJ69Z
- Fairchild Semiconductor Corporation
- 2.5 A, 500 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fairchildsemi.com/IRF820BJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"8 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"200 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Typ...
1487 Bytes - 21:17:49, 11 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF8252.pdf | 0.23 | 1 | Request |
