Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b112(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"15(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1.2V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"15A (Ta)","Gate Charge (Qg) @ Vgs":"130nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Alternate Assembly Site 15/Apr/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"8.2 mOhm @ 15A, 4.5V",...

{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Typical Turn-Off Delay Time":"230 ns","Description":"Value","Maximum Continuous Drain Current":"15 A","Package":"8SOIC","Typical Turn-On Delay Time":"13 ns","Mounting":"Surface Mount","Typical Rise Time":"20 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"8.2@4.5V mOhm","Maximum Gate Source Voltage":"\u00b112 V","Manufacturer":"International Rectifier","Typical Fall Time":"160 ns"}...