Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"11.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"12(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"11.5(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"12(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"8-SOIC","Family":"FETs - Single","Vgs(th) (Max) @ Id":"900mV @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3529pF @ 10V","Series":"HEXFET\u00ae","Standard Package":"95","Supplier Device Package":"8-SO","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF7420","Rds On (Max) @ Id, Vgs":"14 mOhm @ 11.5A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"2.5W...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"900mV @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11.5A (Tc)","Gate Charge (Qg) @ Vgs":"38nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Alternate Assembly Site 15/Apr/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"14 mOhm @ 11.5A, 4.5...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"8-SOIC","Family":"FETs - Single","Vgs(th) (Max) @ Id":"900mV @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"4,000","Supplier Device Package":"8-SO","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF7420","Rds On (Max) @ Id, Vgs":"14 mOhm @ 11.5A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"8-SOIC (0.154...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"900mV @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11.5A (Tc)","Gate Charge (Qg) @ Vgs":"38nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Alternate Assembly Site 15/Apr/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"14 mOhm @ 11.5A, 4.5...

{"Category":"MOSFET","Maximum Drain Source Voltage":"12 V","Typical Turn-Off Delay Time":"291 ns","Description":"Value","Maximum Continuous Drain Current":"11.5 A","Package":"8SOIC","Typical Turn-On Delay Time":"8.8 ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b18 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"14@4.5V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"225 ns"}...