Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b112(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.2V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"7A","Gate Charge (Qg) @ Vgs":"20nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Alternate Assembly Site 15/Apr/2014 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ ...

{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Typical Rise Time":"22 ns","Typical Turn-Off Delay Time":"110 ns","Description":"Value","Maximum Continuous Drain Current":"7 A","Package":"8SOIC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b112 V","Typical Turn-On Delay Time":"7.6 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"30@4.5V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"50 ns"}...