Product Datasheet Search Results:
5 Pages, 142 KB, Scan- IRF643
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 18A, 150-200V
4 Pages, 200 KB, Original- IRF643
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF643
- Frederick Components
- Power MOSFET Selection Guide
19 Pages, 625 KB, Original- IRF643
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
2 Pages, 126 KB, Scan- IRF643
- General Electric
- Power Transistor Data Book 1985
5 Pages, 201 KB, Scan- IRF643
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 204 KB, Scan- IRF643R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 42 KB, Scan- IRF643
- International Rectifier
- 16 A, 150 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 42 KB, Scan- IRF643PBF
- International Rectifier
- 16 A, 150 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 41 KB, Original- IRF643R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Irf.com/IRF643
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"64 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SIN...
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Irf.com/IRF643PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
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Various/IRF643R
{"C(iss) Max. (F)":"1.3n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"10","I(D) Abs. Max.(A) Drain Curr.":"10","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"68n","r(DS)on Max. (Ohms)":"220m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"64","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"6.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"10","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packag...
1292 Bytes - 00:24:11, 15 November 2024
