Product Datasheet Search Results:

IRF641FI.pdf1 Pages, 84 KB, Scan
IRF641FI
N/a
Shortform Datasheet & Cross References Data
IRF641FI.pdf7 Pages, 178 KB, Scan
IRF641FI
Stmicroelectronics, Inc.
10 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

Product Details Search Results:

St.com/IRF641FI
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V",...
1460 Bytes - 09:49:43, 17 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IRF640NS.pdf0.241Request
IRF640N.pdf0.241Request
IRF640NL.pdf0.241Request