Product Datasheet Search Results:

IRF640-001.pdf1 Pages, 42 KB, Scan
IRF640-001
Vishay Presicion Group
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF640-001PBF.pdf1 Pages, 42 KB, Scan
IRF640-001PBF
Vishay Presicion Group
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Vishay.com/IRF640-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"72 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package...
1395 Bytes - 07:51:00, 13 November 2024
Vishay.com/IRF640-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1457 Bytes - 07:51:00, 13 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IRF640NS.pdf0.241Request
IRF640N.pdf0.241Request
IRF640NL.pdf0.241Request