Product Datasheet Search Results:
6 Pages, 175 KB, Scan- IRF634STRL
- International Rectifier
- HEXFET Power MOSFET
1 Pages, 41 KB, Original- IRF634STRL
- N/a
- Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
10 Pages, 197 KB, Original- IRF634STRL
- Vishay [siliconix]
- MOSFET N-CH 250V 8.1A D2PAK - IRF634STRL
10 Pages, 327 KB, Original- IRF634STRLPBF
- Vishay Presicion Group
- 8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Vishay.com/IRF634STRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF634S, SiHF634S","Rds On (Max) @ Id, Vgs":"450 mOhm @ 5.1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drai...
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Vishay.com/IRF634STRLPBF
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Te...
1604 Bytes - 06:00:48, 15 November 2024
